| PART |
Description |
Maker |
| KU3600N10D |
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
|
KEC(Korea Electronics)
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| KU035N06P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS086N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU034N08P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| VSSA3L6S-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VE2045C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
